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Mapping Polarization of Ferroelectric Materials
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At the atomic scale, engineering researchers at the University of Michigan (U-M) have for the first time, mapped the polarization of a cutting-edge material for memory chips. The researchers found a way to improve the performance of ferroelectric materials.
To learn more about this research, which was funded in part by a grant from the National Science Foundation (DMR 07-23032), see the U-M news story Fundamental discovery could lead to better memory chips. (Date of Image: November 2010) |
| Credit: Chris Nelson and Xiaoqing Pan, Department of Materials Science and Engineering, University of Michigan |
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