Presentations from the 2011 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Because of the large interest in the talks given at this Conference and as a service to the semiconductor community, the organizers have made the slides from many of the talks presented available here. These slides should be considered the sole property of the speaker. Please do not alter or reproduce any of the slides presented.

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The Conference organizers would like to thank each of the speakers who have made their slides available!

• TSOM Method for Nanoelectronics Dimensional Metrology
  Ravikiran Attota, National Institute of Standards and Technology
• Quantum Control and Engineering of Single Spins
  David Awschalom, University of California
• Discrete Tomography in Materials Science
  Joost Batenburg, Centrum Wiskunde & Informatica
• Nanocharacterization Challenges in a Changing Microelectronics Landscape
  Michel Brillouet, CEA/LETI
• State-of-the-art TEM for the Semiconductor Industry
  David Cooper, CEA LETI
• SPM-Microscopy for Nanoelectronics
  Peter De Wolf, Veeco
• ITRS Review in Relation to Future Metrology Needs
  Alain Diebold, University of Albany
• Thermal Properties Characterization of Advanced Materials for Nanoelectronics
  Stefan Dilhaire, CNRS-CPMOH
• Measurements and Standards to Characterize More than Moore Applications of Electronics: Perspectives from KIT and IEC
  Norbert Fabricius, Karlsruher Institut für Technologie (KIT)
• 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements
  Johann Foucher, CEA/LETI/MINATEC
• Positioning More Than Moore Characterization Needs and Methods Within the 2011 ITRS
  Mart Graef, Delft Univ.
• Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs
  Anthony Guiseppi-Elie, Clemson
• Nanomechanical Characterization and Metrology for Low-k / ULK Materials
  Ude Hangen, Hysitron
• Metrology and Characterization Challenges for Emerging Research Materials and Devices
  Dan Herr, Semiconductor Research Corporation
• Nanoelectronics and More-than-Moore at IMEC
  Marc Heyns, IMEC
• More than Moore or More Moore: a SWOT Analysis
  G. Dan Hutcheson, VLSI Research, Inc.
• Scanning He Ion Beam Microscopy and Metrology
  David Joy, University of Tennessee
• Overview of Optical Metrology of Advanced Semiconductor Materials
  Vimal Kamineni, College of Nanoscale Science and Engineering, University at Albany
• Strain Analysis in Scaled Si Transistors by Simulation-Hybrid UV Raman Microscopy
  Toshihiko Kanayama, National Institute of Advanced Industrial Science and Technology
• Metrology Challenges for the Ultra-thin SOI
  Oleg Kononchuk, SOITEC
• Inelastic Electron Tunneling Spectroscopy for Measuring Microscopic Bonding Structures, Impurities, and Traps
  T.P. Ma, Yale
• Overview of EUV Mask Metrology
  Bryan Rice, SEMATECH
• Quantitative High-resolution Depth Profiling of Light and Heavy Elements with Low-energy High-resolution ERDA
  Timo Sajavaara, University of Jyväskylä
• Conference Opening
  David Seiler, NIST
• Materials Modeling and Metrology
  Sadas Shankar, Intel
• Atom Probe Tomography of Semiconducting Materials
  Ahmed Shariq, Fraunhofer Center for Nanoelectronic Technologies
• Fundamental Limits of Optical Defect Metrology
  Richard Silver, NIST
• Metrology for 3D Devices: Plasma-based FIB for High-throughput Sectioning of Large Dimensions
  Noel Smith, Oregon Physics
• Wafer Inspection for Sub 20 nm Patterning
  Wolf Staud, Applied Materials, Inc.
• A Novel SPM System for Determining the Quantum Electrical Structure of Nanometer-scale Systems such as Graphene
  Joseph Stroscio, NIST
• Stress-induced Effects Caused by 3D IC TSV Packaging on Advanced Semiconductor Processes
  Valeriy Sukharev, Mentor Graphics
• Carbon Based Nanoelectronics
  C.Y. Sung, IBM T.J. Watson Research Center
• Advances in CD-Metrology (CD-SAXS, Muller Matrix based Scatterometry, and SEM)
  Brad Thiel, University at Albany - SUNY
• Metrology at IMEC: a Center of Excellence Enabling Fundamental Understanding of Process and Materials Development
  Wilfried Vandervorst, IMEC
• Line Edge Roughness of Directed Self Assembled PS-PMMA Block Copolymers – A Candidate for Future Lithography
  Wen-li Wu, NIST
• Metrology for 3D IC Integration (including TSV)
  Ehrenfried Zschech, AMD Saxony LLC & Co. KG